Home > Discrete Semiconductor Products >

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

Product Categories

Power Path Management IC [31]
Power Regulator IC [20]
Audio Power Amplifier IC [19]
Programmable Logic ICs [35]
Microcontroller Integrated Circuit [40]
Discrete Semiconductor Products [36]
UART Interface IC [28]
Data Converter ICs [10]
Wireless ICs [16]
Sensor ICs [23]
Memory ICs [11]
Clock Timer ICs [15]
SMD Resistor Capacitor [29]
Power Module [19]

LU'S TECHNOLOGY CO., Ltd.

Contact Now

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

Name: Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551
Brand: Original
Price: 1 USD

China Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551 wholesale

Brand Name : Original

Model Number : MMBT5551

MOQ : 10 pcs

Price : Bargain

Payment Terms : T/T

Supply Ability : 1kk/months

Delivery Time : 1-7 days

Packaging Details : Carton

Description : Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt

Type : Bipolar Transistors - BJT

Name : Transistors

Part number : MMBT5551

Package : SOT-23-3

Small order : Welcome

Contact Now

2N5551 / MMBT5551 NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon

SOT-23 - Power Transistor and Darlingtons

Part number

BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551

Electrical Characteristics

Mfr. #	MMBT5551
Mounting Style	SMD/SMT
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	160 V
Collector- Base Voltage VCBO	180 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.2 V
Maximum DC Collector Current	0.6 A
Pd - Power Dissipation	325 mW
Gain Bandwidth Product fT	300 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	80 at 10 mA, 5 V
DC Current Gain hFE Max	250 at 10 mA, 5 V
Product Type	BJTs - Bipolar Transistors

Electrical Characteristics (at Ta = 25°C unless otherwise specified)

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551

Product Tags:

MMBT5551 High Voltage Transistor

NPN Amplifier High Voltage Transistor

NPN Silicon High Voltage Transistor

Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551 Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	LU'S TECHNOLOGY CO., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!